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Annealsys designs and manufactures Rapid Thermal Processing (RTP) and Chemical Vapor Deposition (CVD) systems. Our customers are companies for production applications and R&D laboratories in the fields of silicon, compound semiconductors, nanotechnologies, MEMS, etc.
With 300 systems installed worldwide, Annealsys is a leading manufacturer of RTP systems for special production applications using substrates up to 200 mm.
Our cold wall chamber RTP furnaces can perform processes up to 1450°C. Pulse annealing process is available to anneal thermally sensitive substrates. It is possible to carry out process under any types of gases, from atmospheric pressure down to high vacuum.
Applications: implantation annealing, contact annealing, rapid thermal oxidation, nitridation, selenization, sulfurization, CVD of graphene and h-BN, etc.
A high temperature RTP furnace for processes up to 2000°C is available for silicon carbide implantation annealing and graphene generation by sublimation of silicon from SiC.
Our Direct Liquid Injection (DLI) CVD and ALD deposition systems offer the highest process versatility for development of new materials by utilization of low vapor and thermally unstable precursors. They can handle most of the materials of the periodic table and offer unique process and material development capabilities. The 50 mm machine (MC-050) uses a lamp heating and allows in-situ annealing. All DLI-CVD reactors can perform DLI-ALD and pulse pressure CVD processes inside the same chamber.
Applications: Semiconductor, micro batteries, BAW and SAW filters, 2D materials, energy harvesting, etc.
Our philosophy involves building up a long-term relationship with our customers, provide high reliability and high quality tools, insure low cost of ownership and offer outstanding customer support and service. To achieve this, we have created a worldwide network with trained engineers for sales and service.

Keywords

rapid thermal processing systems, chemical vapor deposition systems, rtp, rta, rtcvd, dlicvd, dliald, mocvd, ald atomic layer depostion, compound semiconductors

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22
2004
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