Avalanche Technology Inc.

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"Avalanche Technology Inc., headquartered in Fremont, California is the
leader in next generation Spin Transfer Torque Magnetic RAM (STT-MRAM)
technology, accepted as the front runner to replace traditional Flash,
SRAM, and DRAM for unified architecture support in aerospace and defense,
industrial, storage and other high reliability applications.

Backed by more than 300+ patents granted around cell, circuit and system
design innovation leveraging MRAM, this revolutionary non-volatile memory
employs novel perpendicular magnetic tunnel junction (pMTJ) cell structures
manufactured on 300mm standard CMOS processes. The resulting discrete and
embedded products in production today are designed with standard serial and
parallel interfaces and offer unprecedented density, endurance, reliability
and low power with the persistence and inherent immunity of MRAM
technology, making Avalanche a true "Next Generation MRAM Company.""

Backed by more than 300 granted patents around cell, circuit, and system design leveraging MRAM, our technology and products provide breakthrough speeds, unlimited endurance and non-volatility while reducing power and cost. With such attributes, our technology will serve and exceed our customers' objectives as a replacement for SRAM, eFlash, and ROM in embedded applications in addition to discrete SRAM, non-volatile SRAM, NOR and DRAM.

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semiconductors, hardware, information technology, solid state storage arrays & magnetic memory

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