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Almae Technologies was founded in 2016 as an industrial spin-off company from III-V Lab (a joint Nokia, Thales and CEA-Leti industrial research laboratory). Almae Technologies has a business activity focused on advanced R&D, production and sales of innovative photonic technology and next generation photonic products addressing Telecom and Datacom market demand for ultra-high speed optical data transmission.

Almae's buried heterostructure laser technology offers a seamless solution to scale transmission speed from 10G to more than 100Gb/s. Benefits of our technology are found in lower chip to fiber or waveguide coupling losses, thanks to easy to integrate spot size converter, lower thermal resistance enabling high temperature operation, smallest size modulator and intrinsic low capacitance to give the best overall performance.

Almae is located in the south of Paris at: site Data 4 - Route de Nozay - 91460 Marcoussis - France.

Keywords

telecommunications, optolectronics, nanotechnologies, clean room, electro absorption modulator, dfb laser, directly modulated laser, datacom, indium phosphide, epitaxy, semi insulating buried heterostructure, sibh, wafer, eml, custom design

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34
2016
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